We designed and fabricated silicon PIN diodes on a 5-in. highresistivity ($>$5 k$Omega$$cdot$cm), $($100$)$-orientation, n-type380 $mu$m-thick silicon wafer and developed a diode with an activearea of 1.0$~ imes~$1.0 cm$^2$. The signal-to-noise ratio (SNR) ofthe PIN diode with the 45-MeV proton beam of the MC-50 cyclotron atthe Korea Institute of Radiological and Medical Sciences (KIRAMS)was measured to be 20.8 after being corrected for the minimumionizing particle. The silicon diode was also exposed to the protonbeam for the radiation damage study. The leakage currents of thesilicon diode as a function of the reverse bias voltage weremeasured with a picoammeter before and after the proton beamirradiation. In this paper, we present an explanation of theradiation-induced detector deterioration and the SNR measurement forthe manufactured silicon diode.
Keywords: Proton beam, Silicon PIN diode, Radiation damage, Signal-to-noise ratio