Ex) Article Title, Author, Keywords
J. Korean Phy. Soc. 2009; 54(1): 140-144
Published online January 15, 2009 https://doi.org/10.3938/jkps.54.140
Copyright © The Korean Physical Society.
Y. S. Lee, M. Senthil Kumar, T. V. Cuong, J. Y. Park, J. H. Ryu, S. J. Chung, C.-H. Hong and E.-K. Suh
We report an amelioration of the electrical, thermal and optical performances of green InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with AlGaN/GaN short-superlattice (SSL)-inserted structure grown using metal-organic chemical vapor deposition. According to an atomic force microscopic study, the GaN template with the SSL-inserted structure shows a significant reduction in pit density compared to the conventionally-grown template. The insertion of the SSL is also found to alleviate the effect of threading dislocations on the degradation of the electrical performance and promotes the stability of the K-factor and a low thermal resistance under a long-term acceleration test. A relatively higher optical output power is obtained for SSL-inserted InGaN/GaN green LEDs at high injection currents.
Keywords: InGaN/GaN light-emitting diodes (LEDs), Short superlattice (SSL), Thermal transient test, Thermal resistance
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