Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524

Article

Published online January 15, 2009     https://doi.org/10.3938/jkps.54.152

Copyright © The Korean Physical Society.

Template-Assisted CVD Growth of Silicon Nanowires on a Gram Scale

Sun-Hwak Woo and Dongmok Whang

J. Korean Phys. Soc. 54(1), 152 - 156 (2009)

Abstract

Silicon nanowires (SiNWs) offer an ideal basis to study the effects of quantum confinement and its possible applications due to its predominant role in semiconductor technology. The fabrication of the SiNWs has been extensively studied, but mass production of single-crystal SiNWs is still both challeging and nessasary. We report chemical vapor deposition (CVD) growth of silicon nanowires on a gram scale by using the two-dimensional (2D) hexagonal mesoporous solid SBA-15 as a template. This new method for growing SiNWs maximizes the number of catalytic metal nanoparticles by using a 3D silica host, whose surface area is much greater than that of the conventional 2D substrate, which results in the mass production of single-crystal SiNWs.

Keywords: Silicon nanowires, CVD, Mesoporous solid