Quantum Interference Effects in InAs Semiconductor Nanowires
J. Korean Phy. Soc. 2009; 54: 135~139
Published online January 15, 2009 © 2009 The Korean Physical Society.

Abstract
We report quantum interference effects in InAs semiconductor nanowires strongly coupled to superconducting electrodes. In the normal state, universal conductance fluctuations are investigated as a function of the magnetic field, the temperature, the bias and the gate voltage. The results are found to be in good agreement with theoretical predictions for weakly disordered one-dimensional conductors. In the superconducting state, the fluctuation amplitude is enhanced by a factor up to $sim$1.6, which is attributed to a doubling of the charge transport via Andreev reflection. At a temperature of 4.2 K, well above the Thouless temperature, conductance fluctuations are almost entirely suppressed and the nanowire conductance exhibits anomalous quantization in steps of $e^2/h$.
Keywords: InAs, Semiconductor nanowires, Universal conductance fluctuations, Superconductors, Conductance quantization


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