Ex) Article Title, Author, Keywords
J. Korean Phy. Soc. 2009; 54(1): 280-283
Published online January 15, 2009 https://doi.org/10.3938/jkps.54.280
Copyright © The Korean Physical Society.
S. J. Lee, S. K. Noh, L. R. Dawson and S. Krishna
We briefly report on the temperature dependence of the cutoff energy obtained from the mid-infrared (MIR) photoresponse spectrum of an InAs/GaSb type-II superlattice photodetector. Distinctive absorption bandedges have been clearly detected in a series of MIR spectral responses taken in the temperature range of 30 $-$ 280 K, with two levels being attributed to transitions from the heavy-hole (HH1) and the light-hole (LH1) subbands to the electron (E1) subband. The MIR cutoff energy reveals that the temperature dependence follows the Varshni empirical equation, $E_T = E_o - [alpha T^2/(T+eta)]$. The parametric value obtained from the InAs/GaSb type-II strained superlattice has a linear relationship with those of the binary constituents of GaSb and InAs as a function of $E_o$ while the value of $eta$ is a function of the reciprocal of $E_o$.
Keywords: Indium arsenide, Gallium antimonide, Type-II superlattice, Mid-infrared photodetector, Photoresponse spectra, Cutoff energy
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