Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524
Qrcode

Article

J. Korean Phy. Soc. 2008; 53(9(5)): 2913-2916

Published online November 15, 2008     https://doi.org/10.3938/jkps.53.2913

Copyright © The Korean Physical Society.

Electroluminescence of n-Zn1-xMgxO/ZnO/p-Zn1-xMgxO Heterostructures Grown on Si Substrates

Sh. U. Yuldashev, T. W. Kang, R. A. Nusretov, I. V. Khvan, P. K. Khabibullaev, Y. K. Yeo and R. L. Hengehold

Abstract

The n-Zn$_{0.9}$Mg$_{0.1}$O/ZnO/p-Zn$_{0.9}$Mg$_{0.1}$O heterojunction structures were grown on single-crystal p-type Si (100) substrates by using a simple process of ultrasonic spray pyrolysis. Aqueous solutions of zinc acetate, magnesium acetate, and ammonium acetate were used as the sources of Zn, Mg, and N, respectively. P-type conductivity was observed for the nitrogen-doped ZnO and Zn$_{0.9}$Mg$_{0.1}$O films. A distinct visible electroluminescence was observed at room temperature from the n-Zn$_{0.9}$Mg$_{0.1}$O/ZnO/p-Zn$_{0.9}$Mg$_{0.1}$O heterojunction structures under forward bias conditions.

Keywords: p-type ZnO, ZnO/ZnMgO heterostructure, Electroluminescence