Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524
Qrcode

Article

J. Korean Phy. Soc. 2008; 53(9(5)): 2731-2734

Published online November 15, 2008     https://doi.org/10.3938/jkps.53.2731

Copyright © The Korean Physical Society.

Defect Engineering of GaN Epi-Layers by Irradiation withElectrons and Post Thermal Annealing

L. Ha, D.U. Lee, J.S. Kim, E.K. Kim, B.C. Lee, D.K. Oh, K.-S. Lee, S.-B. Bae

Abstract

vspace{-0.2cm}Deep level transient spectroscopy (DLTS) was used to investigate theelectrical properties of GaN irradiated by high-energy electrons.The GaN epi-layers were grown on sapphire substrates by usingmetal-organic chemical-vapor deposition (MOCVD). The electronirradiations were done by 2-MeV energy beam with a 1 $ imes$10$^{15}$ cm$^{-2}$ dose and the post thermal annealing wasprocessed in a nitrogen atmosphere for 60 s. In the DLTSmeasurement, the as-irradiated GaN sample showed four differentpeaks, but those peaks were partially reduced and eliminated afterannealing at 700 $^{circ}$C. After annealing at 900 $^{circ}$C,the crystallinity of the electron-irradiated GaN was remarkablyimproved and was as good as that of the as-grown GaN epi-layer. Thisshowed that the electron-irradiation and post-thermal-annealingmethods could be useful tool for controling of defects in GaNepi-layers.

Keywords: GaN, Defects, Electron-irradiation, Thermal annealing