Defect Engineering of GaN Epi-Layers by Irradiation withElectrons and Post Thermal Annealing
J. Korean Phy. Soc. 2008; 53: 2731~2734
Published online November 15, 2008 © 2008 The Korean Physical Society.

Abstract
vspace{-0.2cm}Deep level transient spectroscopy (DLTS) was used to investigate theelectrical properties of GaN irradiated by high-energy electrons.The GaN epi-layers were grown on sapphire substrates by usingmetal-organic chemical-vapor deposition (MOCVD). The electronirradiations were done by 2-MeV energy beam with a 1 $ imes$10$^{15}$ cm$^{-2}$ dose and the post thermal annealing wasprocessed in a nitrogen atmosphere for 60 s. In the DLTSmeasurement, the as-irradiated GaN sample showed four differentpeaks, but those peaks were partially reduced and eliminated afterannealing at 700 $^{circ}$C. After annealing at 900 $^{circ}$C,the crystallinity of the electron-irradiated GaN was remarkablyimproved and was as good as that of the as-grown GaN epi-layer. Thisshowed that the electron-irradiation and post-thermal-annealingmethods could be useful tool for controling of defects in GaNepi-layers.
Keywords: GaN, Defects, Electron-irradiation, Thermal annealing


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