Resistive Switching Properties of a Polycrystalline TiO2 Memory Cell with a WN Buffer Layer Inserted
J. Korean Phy. Soc. 2008; 53: 3685~3689
Published online December 15, 2008 © 2008 The Korean Physical Society.

Abstract
Resistive switching properties were investigated in apolycrystalline TiO$_2$ film with a tungsten nitride (WN) barrierlayer sandwiched between the Pt electrodes. DC voltage-currentmeasurements were done to observe the switching properties of thelow- and the high-resistance states. The TiO$_2$ memory cell wasalso studied in terms of the electrical pulse parameter dependenceof the Set/Reset switching process. The dc voltage-currentcharacteristics of the TiO$_2$ memory cell with a WN barrier layerdemonstrated enhanced switching compared to those of the memory cellwithout WN barrier layers. In addition, stable resistance switchingin the cell with WN inserted was repetitively observed to be astrong function of the amplitude and the width of the voltage pulse.This stable switching property is expected to originate from thedecrease in the number of oxygen vacancies at the interfaces betweenthe Pt electrode and the TiO$_2$ layer due to the inserted WN bufferlayer.
Keywords: Resistive switching, TiO$_2$, ReRAM, Nonvolatile memory


Go to page for Current Issue
Go to page for Current Issue

  • e-Submission
  • For review & Editor

Indexed/Covered by

  • Scopus