Ex) Article Title, Author, Keywords
J. Korean Phy. Soc. 2005; 46(4): 985
Published online April 15, 2005 https://doi.org/
Copyright © The Korean Physical Society.
S. J. Lee, J. C. Park, J. O. Kim, S. K. Noh and J. W. Choe
We have investigated the effects of the potential barrier on the confined sublevels observed in the photoluminescence (PL) emission spectra of InAs quantum dots (QDs) capped by an ultra-thin GaAs layer. The PL peak energy of normal InAs QDs covered by a sufficiently thick GaAs layer remains constant as $sim$ 1.11/1.03 eV (15/300 K). For QD systems with cap layers thinner than 10 nm, however, red-shift and blue-shift phenomena in the emission energy are observed above and below, respectively, a critical coverage of 5 nm, which is approximately the same as the average QD height. The red shift and the blue shift can be explained, respectively, by changes in the strained potentials of the GaAs interfaced with the InAs layer and in the band bending of the ultra-thin GaAs potential barriers near surface.\
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