Ex) Article Title, Author, Keywords
J. Korean Phys. Soc. 2020; 76(8): 745-749
Published online April 29, 2020 https://doi.org/10.3938/jkps.76.745
Copyright © The Korean Physical Society.
Division of Materials Science and Engineering, Silla University, Busan 46958, Korea
Correspondence to:Shinho Cho
Sm3+-doped BaMoO4 phosphor thin films were prepared by radio-frequency magnetron sputtering on sapphire substrates at several growth temperatures followed by rapid thermal annealing. A 1 inch-diameter BaMoO4 target doped with 5 mol% Sm2O3 was synthesized using solid-state reaction of BaCO3, MoO3, and Sm2O3 as starting materials. The highest red emission intensity of BaMoO4:Sm3+ phosphor thin film was achieved at a growth temperature of 400 °C, where the optical band gap was 4.70 eV and the color chromaticity coordinate was (0.492, 0.353). These results suggest that the BaMoO4:Sm3+ phosphor thin film is a promising candidate for application in red-light-emitting devices.
Keywords: Thin film, Photoluminescence, Deposition by sputtering
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