Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524


J. Korean Phy. Soc. 2010; 57(6(1)): 1679-1683

Published online December 15, 2010

Copyright © The Korean Physical Society.

Magneto-transport Properties of Two-dimensional Co Anti-dot Arrays

Young Pak Lee, G. H. Kim, M. S. Seo, W. C. Nam, S. J. Lee, J. Y. Rhee, K. W. Kim


?We fabricated two-dimensional Co anti-dot arrays on a silicon substrate using the CMOS (complementary metal-oxide semiconductor) process: a square-lattice structure of 1.02 mm-diameter circular holes with a periodicity of 1.60 mm. The x-ray diffraction data indicate that the anti-dot arrays constitute an exchange-biased system, which consists vertically of a ferromagnetic Co layer interfaced with an antiferromagnetic Co-oxide layer. We found a resistivity anomaly of its temperature dependence below the Neel temperature of CoO, and the exchange-biased behaviors in both magnetization curves and magneto-transport data. By extracting the exchange-bias fields of anti-dot array, it is found that the exchange-bias for the longitudinal magnetic field is much larger than that for the transverse field, which might be attributed to the spin-transfer effect

Keywords: magneto-transport, magnetoresistance, Co, Co anti-dot arrays