Journal of the Korean Physical Society

pISSN 0374-4884 eISSN 1976-8524


J. Korean Phy. Soc. 2009; 54(1): 280-283

Published online January 15, 2009

Copyright © The Korean Physical Society.

On the Temperature Dependence of the Mid-Infrared Cutoff Energy in an InAs/GaSb Type-II Superlattice Photodetector

S. J. Lee, S. K. Noh, L. R. Dawson and S. Krishna


We briefly report on the temperature dependence of the cutoff energy obtained from the mid-infrared (MIR) photoresponse spectrum of an InAs/GaSb type-II superlattice photodetector. Distinctive absorption bandedges have been clearly detected in a series of MIR spectral responses taken in the temperature range of 30 $-$ 280 K, with two levels being attributed to transitions from the heavy-hole (HH1) and the light-hole (LH1) subbands to the electron (E1) subband. The MIR cutoff energy reveals that the temperature dependence follows the Varshni empirical equation, $E_T = E_o - [alpha T^2/(T+eta)]$. The parametric value obtained from the InAs/GaSb type-II strained superlattice has a linear relationship with those of the binary constituents of GaSb and InAs as a function of $E_o$ while the value of $eta$ is a function of the reciprocal of $E_o$.

Keywords: Indium arsenide, Gallium antimonide, Type-II superlattice, Mid-infrared photodetector, Photoresponse spectra, Cutoff energy

Share this article on :

Related articles in JKPS