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Improved Thermal Stability of Green InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes with an AlGaN/GaN Short-Superlattice-Inserted Structure
Y. S. Lee, M. Senthil Kumar, T. V. Cuong, J. Y. Park, J. H. Ryu, S. J. Chung, C.-H. Hong and E.-K. Suh
J. Korean Phy. Soc. 2009; 54: 140-144  
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Comparison of InxGa1-xN/GaN MQWs Grown on GaN and Sapphire Substrates
T. S. Kim, J. Y. Park, T. V. Cuong and C.-H. Hong
J. Korean Phy. Soc. 2006; 49: 2001-  
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Effect of Annealing on InGaN/GaN Multiple Quantum Wells
T. S. Kim, J. Y. Park, T. V. Cuong, H. G. Kim, H. J. Lee, E-K. Suh and C-H. Hong
J. Korean Phy. Soc. 2005; 47: 871-875  
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The Influence of Well and Barrier Conditions on InGaAsN/GaAs multiple quantum Wells Grown by Using MOCVD
C. S. Park, T. S. Kim, J. Y. Park, T. V. Cuong, H. W. Shim, E.-K. Suh, C. H. Hong
J. Korean Phy. Soc. 2003; 43: 1096-  
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Photocurrent and Photoluminescence Measurements on In0.2Ga0.8As0.98N0.02/GaAs Strained Multi-Quantum Wells Grown by Using Metalorganic Chemical Vapor Deposition
T. S. Kim, T. V. Cuong, C. S. Park, J. Y. Park, H. J. Lee, E.-K. Suh, C.-H. Hong
J. Korean Phy. Soc. 2003; 43: 758-  
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Composition Dependence of the Band-Gap Energy of GaAsN Alloys
T. S. Kim, T. V. Cuong, C. S. Park, J. Y. Park, H. J. Lee, E.-K. Suh, C.-H. Hong
J. Korean Phy. Soc. 2003; 43: 273-  
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Inuence of Ga Source on Nitrogen Incorporation of Ga(In)AsN/GaAs Quantum Wells Grown by Metalorganic Chemical Vapor Deposition
T. V. Cuong, H. K. Cho, C. S. Park, J. Y. Park, C.-H. Hong, E.-K. Suh
J. Korean Phy. Soc. 2003; 42: 514-  
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