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Characteristics of SiO2 Etching with a C4F8/Ar/CHF3/O2 Gas Mixture in 60-MHz/2-MHz Dual-frequency Capacitive Coupled Plasmas
M. H. Jeon, S-K. Kang, J. Y. Park, G. Y. Yeom
J. Korean Phy. Soc. 2011; 59: 3024-3030  
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Improved Thermal Stability of Green InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes with an AlGaN/GaN Short-Superlattice-Inserted Structure
Y. S. Lee, M. Senthil Kumar, T. V. Cuong, J. Y. Park, J. H. Ryu, S. J. Chung, C.-H. Hong and E.-K. Suh
J. Korean Phy. Soc. 2009; 54: 140-144  
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In-Surfactant Time Dependent Properties of InGaN/GaN Multiple Quantum-Wells Grown by Using MOCVD
T. S. Kim, J. Y. Park, T. S. Jeong, S. Kang, K. H. Shim and C.-H. Hong
J. Korean Phy. Soc. 2008; 53: 1939-1944  
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Development of the E-E Detector by Using a Thin Plastic Scintillator
S. H. Hwang, J. Y. Park, J. K. Ahn and J. H. Won
J. Korean Phy. Soc. 2007; 50: 1574-1578  
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Comparison of InxGa1-xN/GaN MQWs Grown on GaN and Sapphire Substrates
T. S. Kim, J. Y. Park, T. V. Cuong and C.-H. Hong
J. Korean Phy. Soc. 2006; 49: 2001-  
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Revival Structures of Linear Molecules in a Field-Free Alignment Condition as Probed by High-Order Harmonic Generation
G. H. Lee, H. T. Kim, J. Y. Park, C. H. Nam, T. K. Kim, J. H. Lee and H. Ihee
J. Korean Phy. Soc. 2006; 49: 337-  
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One-Dimensional Ordered Structure of C2H4 on a Si(001) Surface
J. H. Seo, J. Y. Park, C. N. Whang, K.-H. Yoo, S. S. Kim, D. S. Choi and K. H. Chae
J. Korean Phy. Soc. 2006; 49: 167-  
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Effect of Annealing on InGaN/GaN Multiple Quantum Wells
T. S. Kim, J. Y. Park, T. V. Cuong, H. G. Kim, H. J. Lee, E-K. Suh and C-H. Hong
J. Korean Phy. Soc. 2005; 47: 871-875  
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Measurement of Gas Bremsstrahlung at the Pohang Light Source by Using a CeF3 Scintillator
J. Y. Park, S. H. Hwang, J. K. Ahn, E.-S. Kim and Y. J. Han
J. Korean Phy. Soc. 2005; 47: 788-792  
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Ion Scattering Spectroscopy Study of Si(001)c(4*4)-C Surface Reconstruction
J. Y. Park, J. H. Seo, J. Y. Kim, C. N. Whang, S. S. Kim, D. S. Choi and K. H. Chae
J. Korean Phy. Soc. 2004; 45: 614-  
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