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A Test on CaMoO4 crystal coupled with a LAAPD for double beta decay experiment
Yeongduk Kim, J. I. Lee, W. G. Kang
J. Korean Phy. Soc. 2010; 56: 733-736  
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Passivation of Bottom-Gate IGZO Thin Film Transistors
D. H. Cho, S. H. Yang, J.-H. Shin, C. W. Byun, M. K. Ryu, J. I. Lee, C. S. Hwang and H. Y. Chu
J. Korean Phy. Soc. 2009; 54: 531-534  
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The Optical Characteristics of Epitaxial Lateral and Vertical Overgrowth of GaN on Stripe-Patterned Si Substrate
H. Y. Yeo, S. I. Jung, I. Yun, J. I. Lee, I. K. Han, S. M. Cho
J. Korean Phy. Soc. 2007; 50: 771-775  
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High Potential Barrier Effects on Self-Assembled InAs Quantum Dots
S. I. Jung, H. Y. Yeo, I. Yun, J. Y. Leem, S. M. Cho, J. S. Kim, J. I. Lee
J. Korean Phy. Soc. 2007; 50: 767-770  
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Near-Field Emission Properties of a Self-Formed InAs Quantum Dot Laser Diode by Using Near-Field Scanning Optical Microscopy
S. I. Jung, H. Y. Yeo, I. Yun, I. K. Han, S. M. Cho, J. I. Lee
J. Korean Phy. Soc. 2007; 50: 763-766  
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Study on the Energy-Band Structure of an InAs/InGaAs/GaAs Quantum-Dot Infrared Photodetector Structure
J. S. Kim, E. K. Kim, J. D. Song, W. J. Choi and J. I. Lee
J. Korean Phy. Soc. 2006; 49: 2124-  
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Low-Frequency Noise in High-k Gate Dielectric Nanoscale MOSFETs
I. K. Han, H. D. Nam, W. J. Choi, J. I. Lee, B. Szentpali and A. Chovet
J. Korean Phy. Soc. 2006; 49: 1117-  
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Single-Electron Transport in GaAs/AlGaAs Nano-In-Plane-Gate Transistors
S. H. Son, Y. S. Choi, K. H. Cho, S. W. Hwang, J. I. Lee, Y. J. Park, Y. S. Yu and D. Ahn
J. Korean Phy. Soc. 2005; 47: 517-  
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Spin-Asymmetry of the Density of States for Bulk and Surface Fe, Co, and Ni
C. H. Park, B. C. Lee and J. I. Lee
J. Korean Phy. Soc. 2005; 47: 655-  
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Performance of a Large Volume Liquid Scintillation Detector for the Measurement of Fast Neutrons
Jing-Jun Zhu, Ke-Jun Kang, Yuan-Jing Li, J. W. Kwak, H. Bhang, S. Y. Kim, S. C. Kim, S. K. Kim, H. S. Lee, J. Lee, S. S. Myung, M. J. Lee, J. I. Lee, Y. D. Kim, M. J. Hwang, Y. J. Kwon, I. S. Hahn, H. J. Kim and Li Jin
J. Korean Phy. Soc. 2005; 47: 202-  
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