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Effects of High-energy Ni-ion Irradiation in the InAlGaN/GaNHeterostructure
M.Senthil Kumar, Y.S. Lee, S.J. Chung, C.-H. Hong, E.-K. Suh
J. Korean Phy. Soc. 2009; 55: 652-655  
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Magneto-transport Properties of GaMnAs:Si FerromagneticSemiconductors
Hyungchan Kim, Hakjoon Lee, S.J. Chung, Sanghoon Lee, Y.J. Cho, X. Liu, J.K. Furdyna
J. Korean Phy. Soc. 2009; 55: 304-308  
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Improved Thermal Stability of Green InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes with an AlGaN/GaN Short-Superlattice-Inserted Structure
Y. S. Lee, M. Senthil Kumar, T. V. Cuong, J. Y. Park, J. H. Ryu, S. J. Chung, C.-H. Hong and E.-K. Suh
J. Korean Phy. Soc. 2009; 54: 140-144  
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Strain-Engineered Magnetic Anisotropy of GaMnAs Ferromagnetic Semiconductors
T. Kim, S. J. Chung, D. Y. Shin, I. S. Choi, Sanghoon Lee, X. Liu, J. K. Furdyna
J. Korean Phy. Soc. 2007; 50: 829-833  
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Progress of Physics Studies in the Hanbit Mirror Device
K.-I. You, J. G. Bak, K. K. Choh, J. Chung, A. C. England, J. S. Hong, H. G. Jhang, S. S. Kim, W. H. Ko, D. K. Lee, J. H. Lee, S. G. Lee, T. Lho, H. K. Na, B. H. Park, M. K. Park, D. C. Seo, S. H. Seo, J. H. Yeom, S. J. Yoo, S. W. Yoon and Hanbit Team
J. Korean Phy. Soc. 2006; 49: 412-  
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Characteristics of p-Type GaN Formed by Two Different Types of Mg Diffusion
S. J. Chung, B. Karunagaran, M. Senthilkumar and E.-K. Suh
J. Korean Phy. Soc. 2006; 49: 177-  
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Electrical and Optical Properties of Nitrogen-Incorporated Silicon-Oxide Films by Using Plasma-Enhanced Chemical-Vapor Deposition with Tetramethoxysilane /N2O/NH3 Gas
C. J. Chung, T. H. Chung, M. S. Kang and Y. Kim
J. Korean Phy. Soc. 2006; 49: 162-  
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Low-Temperature Deposition of Silicon-Nitride Layers by Using PECVD for High Efficiency Si Solar Cells
B. Karunagaran, J. P. Jeong, S. Nagarajan, S. J. Chung and E. -K. Suh
J. Korean Phy. Soc. 2006; 48: 1250-  
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Photocurrent Spectroscopy Investigations of Mg-Related Defect Levels in p-Type GaN
S. J. Chung, B. Karunagaran, C. H. Hong, H. J. Lee and E.-K. Suh
J. Korean Phy. Soc. 2006; 48: 460-  
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Doping Effect on the Properties of III-V Ferromagnetic Semiconductor GaMnAs Epilayers and Their Superlattices
S. Lee, S. J. Chung, X. Liu and J. K. Furdyna
J. Korean Phy. Soc. 2005; 47: 444-  
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