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Simulation Study of Sub-10 nm Pattern Formation Using Diblock Polymer Directed Self-assembly
Sang-kon kim, Hye-Keun Oh, Young-Dae Jung, Ilsin An
J. Korean Phy. Soc. 2010; 57: 1942-1945  
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Reduction of Line Width and Edge Roughness by Resist Reflow Process for Extreme Ultra-Violet Lithography
In Wook Cho, Hyunsu Kim, Joo-Yoo Hong, Hye-Keun Oh, Seong Wook Kim
J. Korean Phy. Soc. 2010; 56: 1767-1771  
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Mechanism of Embedded Micro/Nano Channel Formation for a Negative-Tone Photoresist by Moving Mask Lithography
sang-kon kim, Hye-Keun Oh
J. Korean Phy. Soc. 2010; 56: 851-855  
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Impact of the Parameters for a Chemically-amplified Resist on theLine-edge-roughness by Using a Molecular-scale LithographySimulation
Sang-Kon Kim, Hye-Keun Oh, Young-Dae Jung, Ilsin An
J. Korean Phy. Soc. 2009; 55: 675-680  
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Modeling of the Cross-linking and the Diffusion Processes in aNegative Chemically Amplified Resist
Sang-Kon Kim, Hye-Keun Oh, Young-Dae Jung, Ilsin An
J. Korean Phy. Soc. 2009; 55: 661-665  
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Influence of Defects on Top of the Absorber in Extreme Ultraviolet Lithography
Eun-Jin Kim, Young-Min Kang, Hye-Keun Oh, In-Ho Park, Jung-Youl Lee, Deog-Bae Kim, Jae-Hyun Kim
J. Korean Phy. Soc. 2009; 55: 463-466  
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Investigation of Resolution Enhancement by Using Interferometric Immersion Lithography with a Lloyd Mirror
Jee-Hye You, Seung-Wook Park, Young-Min Kang, Hye-Keun Oh
J. Korean Phy. Soc. 2009; 54: 2265-2268  
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Impact of Polarization Inside a Resist for ArF Immersion Lithography
Sang-Kon Kim, Hye-Keun Oh, Young-Dae Jung and Ilsin An
J. Korean Phy. Soc. 2009; 54: 1685-1691  
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Influence of Mask Feature on the Diffracted Light in Proximity and Contact Lithography
Sang-Kon Kim, Hye-Keun Oh
J. Korean Phy. Soc. 2008; 53: 3578-3583  
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Solving the Navier-Stokes Equation for Thermal Reflow
Sang-Kon Kim, Hye-Keun Oh
J. Korean Phy. Soc. 2008; 53: 2682-2687  
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