Prediction of the Current-Voltage Characteristics and the Bipolar Resistive Switching Mechanism in Polymer-Based Sandwiched Structures
Muhammad Naeem Awais, Muhammad Naeem Shehzad
Department of Electrical and Computer Engineering, COMSATS University Islamabad, Lahore Campus, M. A. Jinnah Building, Defence Road, Off Raiwind Road, Lahore, Pakistan
This research work addresses the prediction of the current-voltage (IV) characteristics and the bipolar switching mechanism of polymer-based resistive switches by examining their structures before their fabrication. The research was carried out through an analytical study of the device structure, thereby correlating the predicted IV curve to the in-situ IV characteristics of the device. We concluded that the defects/traps within the sandwiched layer lead to the interface effect being the dominant switching mechanism. We also found that the devices following the interface effect are driven from trap-limited space-charge-limited current (SCLC) conduction to trap-free SCLC conduction as their current conduction mechanisms.
J. Korean Phys. Soc. 2019; 75: 409-414
Investigation of the Ionic Conductivities of Yttria-Doped Ceria and Yttria-Stabilized Zirconia by Using the Statistical Moment Method
Le Thu Lam1, Vu Van Hung2, Bui Duc Tinh3
1Tay Bac University, Son La, Vietnam
2University of Education, Vietnam National University, Hanoi, Vietnam
3Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam, and Hanoi National University of Education, Hanoi, Vietnam
We investigated the ionic conductivities of yttria-doped ceria (YDC) and yttria-stabilized zirconia (YSZ) by using the statistical moment method including the anharmonicity effects of thermal lattice vibrations. The distribution of oxygen vacancies around dopants and the important role of cation barriers on vacancy diffusion are evaluated in detail. The ionic conductivities of YDC and YSZ are calculated as functions of the dopant concentration. Our results show that the ionic conductivities increase with increasing dopant concentration and reach a maximum value at x ≈ 0.1 for YDC at T = 1073 K and at x ≈ 0.2 for YSZ at T = 873 K and 973 K, consistent with experimental observations.
J. Korean Phys. Soc. 2019; 75: 293-303
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