[Review] Mg2BIV: Narrow Bandgap Thermoelectric Semiconductors
Il-Ho Kim
Korea National University of Transportation, Chungju 27469, Korea
Magnesium compound Mg2BIV (BIV = Si, Ge or Sn) has a favorable combination of physical and chemical properties and can be a good base for the development of new efficient thermoelectrics. Because they possess similar properties to those of group BIV elemental semiconductors, they have been recognized as good candidates for thermoelectric applications. Mg2Si, Mg2Ge and Mg2Sn with an antifluorite structure are narrow bandgap semiconductors with indirect band gaps of 0.77 eV, 0.74 eV, and 0.35 eV, respectively. Thermoelectric properties of Mg2BIV were reviewed: intrinsic Mg2Si, doped Mg2Si:Dm (D = Al, In, Bi, Sb, Te or Se), and solid solutions of intrinsic/doped Mg2Si1-xSnx:Dm and Mg2Si1-xGex:Dm.
J. Korean Phy. Soc. 2018; 72: 1095-1109  https://doi.org/10.3938/jkps.72.1095
Top and Split Gating Control of the Electrical Characteristics of a Two-dimensional Electron Gas in a LaAlO3/SrTiO3 Perovskite Hetero-interface
Yongsu Kwak1, Jonghyun Song1, Jihwan Kim2, Jinhee Kim2
1Department of Physics, Chungnam National University, Daejeon 34134, Korea
2Korea Research Institute of Standards and Science, Daejeon 34113, Korea
We fabricated a top gate field-effect transistor using polymethyl methacrylate as the gate insulator on the LaAlO3/SrTiO3 hetero interface. Depletion of current was observed at low temperatures in the top gate and split gate devices. Under TC, the superconducting threshold current can be adjusted by applying a split-gate voltage. When a negative gate voltage was applied, the superconducting threshold current was disappeared. This observation suggests the possibility of a gate tunable quantum device with a LaAlO3 / SrTiO3 hetero interface.
J. Korean Phy. Soc. 2018; 72: 925-929  https://doi.org/10.3938/jkps.72.925
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