Electrochemical Doping of Graphene with H2SO4 Electrolyte
Young-Jun Yu
Department of Physics, Chungnam National University, Daejeon 34134, Korea
In this work, the doping variations of graphene when a gate voltage is applied using H2SO4 as an electrolyte are investigated. In particular, the natural and the artificial release behaviors of the accumulated carrier density in graphene by electrolyte gating were observed. Furthermore, this doping condition of graphene is not permanent, as it returns to the initial doping-condition after several tens of hours. On the other hand, the direct electron and hole doping of graphene by means of an electrolyte gating avenue is demonstrated. These results represent significant findings pertaining to the conductivity tuning of graphene electrodes, which can be utilized to create flexible and transparent electrodes.
J. Korean Phy. Soc. 2019; 74: 132-135  https://doi.org/10.3938/jkps.74.132
Dielectric and Ferroelectric Properties of P(VDF-TrFE) Films with Different Polar Solvents
Dae Sol Kong, Tae Kwon Lee, Young Joon Ko, Jong Hoon Jung
Department of Physics, Inha University, Incheon 22212, Korea
We investigated the effects of polar solvents on the structural, dielectric, and ferroelectric properties of P(VDF-TrFE) films. DMF solvent results in a thin film with a rough surface, a high dielectric constant and a high coercive field. THF solvent results in a thick film with a flat surface, a low dielectric constant and a low coercive field. The ferroelectric domain switching of the films can be modeled by using a classical KAI model with similar domain-wall energies. Ferroelectric polarization of P(VDF-TrFE) films for both solvents shows a long-term retention stability up to 105 s and fatigue stability up to 107 cycles.
J. Korean Phy. Soc. 2019; 74: 78-81  https://doi.org/10.3938/jkps.74.78
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