Temperature-Dependent Photoluminescence Studies of Ge$_{1-y}$Sn$_y$ ($y$ = 4.3%$-$9.0%) Grown on Ge-Buffered Si: Evidence for a Direct Bandgap Cross-Over Point
Mee-Yi Ryu1, Thomas R. Harris2, Buguo Wang2, Yung Kee Yeo2, Michael R. Hogsed2, Sang Jo Lee3, Jong Su Kim3, John Kouvetakis4
1Department of Physics, Kangwon National University, Chuncheon 24341, Korea
2Department of Engineering Physics, Air Force Institute of Technology, Ohio 45433, U.S.A.
3Department of Physics, Yeungnam University, Gyeongsan 38541, Korea
4School of Molecular Science, Arizona State University, Arizona 85287, U.S.A.
The temperature-dependent photoluminescence (PL) from Ge$_{1−y}$Sn$_y$ ($y$ = 4.3%–9.0%) alloys grown on Ge-buffered Si substrates was studied as a function of the Sn content. The PL from Ge1−ySny alloys with high Sn contents (≥7.0%) exhibited the typical characteristics of direct bandgap semiconductors. For the Ge$_{1−y}$Sn$_y$ alloys with low Sn contents (≤6.2%), the PL emission peaks corresponding to both the direct bandgap (ED) and the indirect bandgap (EID) PL appeared at most temperatures. The cross-over point for unstrained Ge$_{1−y}$Sn$_y$ was found to be about 6.4%–6.7% Sn by using linear fits to the data in the range of Sn contents from 0% to 9.0%.
J. Korean Phys. Soc. 2019; 75: 577-585  https://doi.org/10.3938/jkps.75.577
Performance Test of a Laboratory-Based Ambient Pressure X-ray Photoelectron Spectroscopy System at the Gwangju Institute of Science and Technology
Hojoon Lim1, Youngseok Yu1, Dongwoo Kim1, Yoobin Esther Koh1, Bongjin Simon Mun1, Vincent Lehane2
1Department of Physics and Photon Science, Gwangju Institute of Science and Technology, Gwangju 61005, Korea 
2Scienta Omicron AB, P.O. Box 15120 SE-750 15 Uppsala, Sweden
The performance test of newly installed laboratory based ambient pressure X-ray photoelectron spectroscopy (AP-XPS) system at Gwangju Institute of Science and Technology was carried out. The system, consisted of a Scienta R4000 HiPP-3 electron analyzer and a monochromatized Al K$\alpha$ X-ray source, is designed to operate a gas pressure of up to 25 Torr. Two modes of XPS operations were tested, a transmission mode and an 1D chemical imaging mode. In the transmission mode, $i.e.$, a typical standard lens operation mode, a good intensity-to-signal ratio of core-level spectra was obtained under Ar gas pressure up to 1 Torr. For the operation of imaging mode, a spatial resolution of ~10 $\mu$m was achieved at Ar gas pressure of 500 mTorr.
J. Korean Phys. Soc. 2019; 75: 541-546  https://doi.org/10.3938/jkps.75.541
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