Top and Split Gating Control of the Electrical Characteristics of a Two-dimensional Electron Gas in a LaAlO3/SrTiO3 Perovskite Hetero-interface
Yongsu Kwak1, Jonghyun Song1, Jihwan Kim2, Jinhee Kim2
1Department of Physics, Chungnam National University, Daejeon 34134, Korea
2Korea Research Institute of Standards and Science, Daejeon 34113, Korea
We fabricated a top gate field-effect transistor using polymethyl methacrylate as the gate insulator on the LaAlO3/SrTiO3 hetero interface. Depletion of current was observed at low temperatures in the top gate and split gate devices. Under TC, the superconducting threshold current can be adjusted by applying a split-gate voltage. When a negative gate voltage was applied, the superconducting threshold current was disappeared. This observation suggests the possibility of a gate tunable quantum device with a LaAlO3 / SrTiO3 hetero interface.
J. Korean Phy. Soc. 2018; 72: 925-929  https://doi.org/10.3938/jkps.72.925
Influence of the State of the Tungsten Tip on STM Topographic Images of SnSe Surfaces
Trinh Thi Ly, Jungdae Kim
Department of Physics, BRL, and EHSRC, University of Ulsan, Ulsan 44610, Korea
We investigate the influence of the W tip’s state on the STM topographic images of SnSe surfaces. The atomic features observed on a SnSe surface in STM topography can dramatically change depending on the W tip’s state. Compared to a typical image of a SnSe surface (Fig. a), the enhanced topography (Fig. b) has a much stronger corrugation amplitude for Sn atoms, as well as a reduced apparent radius of Sn atoms. Also, the atomic features of Se atoms, which are hidden in typical STM images, become observable with a tip in the dz2 state (Fig. d).
J. Korean Phy. Soc. 2018; 72: 658-661  https://doi.org/10.3938/jkps.72.658
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