Effect of Contact Resistance on the High-Field Characteristics of MoS$_2$ Transistors
J. Korean Phys. Soc. 2019; 75: 471~475
Published online September 30, 2019 © 2019 The Korean Physical Society.


1Department of Electronic Engineering, Kyung Hee University, Yongin 17104, Korea
2Department of Computer Science, Kyung Hee University, Yongin 17104, Korea
Correspondence to: Seunghyun Lee, Lok-won Kim
Abstract
Layered materials such as MoS$_2$ display a wide range of unique electronic properties. Unlike graphene, this material has a relatively large band gap (1.3 - 1.9 eV) and exhibits stable on/off switching as a transistor. As MoS$_2$ devices are scaled down, robust high field operation is essential for the development of reliable electronic system. In this work, we show that high voltage characteristics, current drives, and breakdown voltages of MoS$_2$ transistors can be improved by reducing the contact resistance at the interface of metal/MoS$_2$.
PACS numbers: 73.63.−b, 73.40.Cg, 73.40.Qv
Keywords: MoS2, Transistor, High-field


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