Growth of AlN Epilayers on Sapphire Substrates by Using the Mixed-Source Hydride Vapor Phase Epitaxy Method
J. Korean Phys. Soc. 2019; 74: 1160~1165
Published online June 28, 2019 © 2019 The Korean Physical Society.


1Department of Nano Fusion Technology, Pusan National University, Busan 46241, Korea
2Department of Electronic Materials Engineering, Korea Maritime and Ocean University, Busan 49112, Korea
3Power Semiconductor Commercialization Center, Busan Techno Park, Busan 46239, Korea
4Department of Nanoenergy Engineering and Department of Nano Fusion Technology, Pusan National University, Busan 46241, Korea
5Department of Physics, Andong National University, Andong 36729, Korea
Correspondence to: Hyung Soo Ahn, Suck-Whan Kim
Abstract
Growing high-quality AlN epilayers is essential for the fabrication of AlN-based or GaN-based electronic devices that can be operated under high voltages and high frequencies. In this study, AlN epilayers were grown by two steps, (the growth of an AlGaN nucleation region and subsequently, the growth of pure AlN epilayers on the pre-grown AlGaN nucleation region), on sapphire substrates without a buffer layer by using a mixed (Al+Ga) source by the mixed-source HVPE method. The mixed-source HVPE method using a small quantity of Ga in the mixed source is effective for the growth of an AlN epilayer since it generates gaseous precursors by activating Al and covering its surface with Ga before oxidation by the residual oxygen in the reactor.
PACS numbers: 81.15.Kk, 81.05.Ea, 81.10.Bk
Keywords: AlN, AlGaN, Mixed-source, HVPE, Epitaxy, Wide-bandgap semiconductor


Go to page for Current Issue
Go to page for Current Issue

  • e-Submission
  • For review & Editor

Indexed/Covered by

  • Scopus