Influence of Annealing Temperature and Time on the Photoluminescence and the Structure of Y$_2$O$_3$:Eu Thin Films

Department of Advanced Materials Engineering, Chungbuk National University, Cheongju 28644, Korea
Abstract
In the paper, the influences of annealing temperature and holing time on the photoluminescence and structure of Y$_2$O$_3$:Eu thin films are reported. The Y$_2$O$_3$:Eu films had a cubic Y$_2$O$_3$ structure textured with the (222) plane. PL was observed from the annealed films, attributed to the radiative relaxation of the 4f$^6$ orbital electrons from $^5$D$_0$ to $^7$F$_J$ multiplets in Eu$^{3+}$ ions. The PL intensity enhanced as the annealing temperature was increased, resulting from the improved crystalline quality of the films. The PL intensity of the 1200$^\circ$C-annealed films was decreased for longer holding time resulting from the formation of the Y$_2$SiO$_5$ phase.

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