A Dielectric-Modulated Normally-Off AlGaN/GaN MOSHEMT for Bio-Sensing Application: Analytical Modeling Study and Sensitivity Analysis
J. Korean Phy. Soc. 2019; 74: 349~357
Published online February 28, 2019 © 2019 The Korean Physical Society.

1School of Electronics Engineering, KIIT (Deemed to be University), Odisha 751024, India
2Department of ECE, LNM Institute of Information Technology, Jaipur, Rajasthan 302031, India
The manuscript describes the working principle of a normally-off AlGaN/GaN MOSHEMT based biosensor for level free electrical detection of biomolecules with the aid of an analytical model developed for device electrostatics parameter, such as change in threshold voltage. The analytical model provides insight in to the device physics, in depth knowledge about the theory behind the quantum mechanical operations of the GaN based MOSHEMT, an introduction to the target biomolecules and their significance to the human immune system. This work may be very beneficial for society as a huge market for biosensors exists in the health and the food industries.
PACS numbers: 71.55.Eq
Keywords: 2DEG, Gallium nitride (GaN), Aluminum gallium nitride (AlGaN), MOSHEMT, Biosensor, TCAD

Go to page for Current Issue
Go to page for Current Issue

  • e-Submission
  • For review & Editor

Indexed/Covered by

  • Scopus