Electrochemical Doping of Graphene with H2SO4 Electrolyte
J. Korean Phy. Soc. 2019; 74: 132~135
Published online January 31, 2019 © 2019 The Korean Physical Society.

Department of Physics, Chungnam National University, Daejeon 34134, Korea
Correspondence to: Young-Jun Yu
In this work, the doping variations of graphene when a gate voltage is applied using H2SO4 as an electrolyte are investigated. In particular, the natural and the artificial release behaviors of the accumulated carrier density in graphene by electrolyte gating were observed. Furthermore, this doping condition of graphene is not permanent, as it returns to the initial doping-condition after several tens of hours. On the other hand, the direct electron and hole doping of graphene by means of an electrolyte gating avenue is demonstrated. These results represent significant findings pertaining to the conductivity tuning of graphene electrodes, which can be utilized to create flexible and transparent electrodes.
PACS numbers: 61.48.Gh, 68.65.Pq, 81.05.ue
Keywords: Graphene, Electrolyte, Carrier density, Doping

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