Top and Split Gating Control of the Electrical Characteristics of a Two-dimensional Electron Gas in a LaAlO3/SrTiO3 Perovskite Hetero-interface
J. Korean Phy. Soc. 2018; 72: 925~929
Published online April 30, 2018 © 2018 The Korean Physical Society.

1Department of Physics, Chungnam National University, Daejeon 34134, Korea
2Korea Research Institute of Standards and Science, Daejeon 34113, Korea
We fabricated a top gate field-effect transistor using polymethyl methacrylate as the gate insulator on the LaAlO3/SrTiO3 hetero interface. Depletion of current was observed at low temperatures in the top gate and split gate devices. Under TC, the superconducting threshold current can be adjusted by applying a split-gate voltage. When a negative gate voltage was applied, the superconducting threshold current was disappeared. This observation suggests the possibility of a gate tunable quantum device with a LaAlO3 / SrTiO3 hetero interface.
PACS numbers: 73.40.-c
Keywords: Top gating, Split gating, 2-DEGS, Perovskite, Hetero-interface

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