Inductively Coupled-plasma Dry Etching of a ZnO Thin Film by Ar-diluted CF4 Gas
J. Korean Phy. Soc. 2011; 58: 1536~1540
Published online May 13, 2011 © 2011 The Korean Physical Society.

Abstract
In this paper, the behavior of zinc oxide (ZnO) thin films etched by using a diluted CF4 plasma was investigated. We controlled the substrate bias power of the inductively coupled-plasma (ICP) etching system and the CF4/Ar gas ratio to improve the etching rate. We accomplished a high etching rate of 144.85 nm/min at a substrate bias power (Sbp) of 200 W under a low ICP power of 200 W. Chemical bonding evaluated by using X-ray photoemission spectroscopy shows the formation of zinc compounds as byproducts during the etching process. Also, we systematically investigated the CF4-based plasma etching mechanism of ZnO in an ICP reactive etching system.
Keywords: ZnO, Dry etching, CF4, Etching rate, Fluorine content,


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