The Degradation of Deposition Blocking Layer during Area Selective Plasma Enhanced Atomic Layer Deposition of Cobalt
J. Korean Phy. Soc. 2010; 56: 104~107
Published online January 15, 2010 © 2010 The Korean Physical Society.

Abstract
 The effects of plasma on the degradation of deposition blocking layer during area selective atomic layer deposition were investigated. Co atomic layer deposition (ALD) processes were developed by using Co(iPr-AMD)2 (bis(N,N���-diisopropylacetamidinato)cobalt(II)) as a precursor, and two different reactants, NH3 gas for thermal ALD (TH-ALD) and NH3 plasma for plasma enhanced ALD (PE-ALD). TH- and PE-ALD were applied to area selective ALD (AS-ALD) by using octadecyltrichlorosilane (OTS) self-assembled monolayer (SAM) as a blocking layer. Both ALD processes produced pure Co films with resistivity as low as 50 µÎ©cm. For PE-ALD, however, no selective deposition was achieved due to the degradation of OTS hydrophobicity by NH3 plasma exposure. The effects of plasma on the blocking efficiency of SAM were studied.
Keywords: atomic layer deposition, cobalt, area selective deposition, self-assembled monolayer


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