?Preparation of ITO and IZO thin films by using Facing Target Sputtering (FTS) method
J. Korean Phy. Soc. 2009; 55: 1996~2001
Published online November 14, 2009 © 2009 The Korean Physical Society.

Abstract
In the study we investigated electrical and optical properties of indium oxide (In2O3) doped with 10 wt.?? tin oxide (SnO2)and indium oxide (In2O3) doped with 10 wt.% zinc oxide thin films for transparent conductive oxide (TCO) in facing targets sputtering (FTS) system. All thin films were prepared on the glass at room temperature and in a variety of oxygen contents in the sputter gas. And all as-deposited thin films were annealed at the various temperatures in the air atmosphere. The electrical and optical properties of as-deposited thin films were investigated by a four point probe,?UV/VIS spectrometer and an X-ray diffractometer (XRD) and a Hall Effect measurement.
As a result, as increasing oxygen contents in the sputter gas, the optical transmittance in visible range of all thin films increased (>80??). ITO and IZO thin film has 6.7?0-4??§?-cm and 4.5?0-4 §?-cm of resistivity at optimum oxygen contents, respectively. After post-annealed, the structure of ITO thin film?changed from amorphous to?polycrystalline but IZO thin films had amorphous structure.
Keywords: FTS, Indium tin oxide, Indium zinc oxide, annealing


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