Comparison between Organic Thin Films Deposited by CCP-CVD and ICP-CVD
J. Korean Phy. Soc. 2009; 55: 1950~1954
Published online November 14, 2009 © 2009 The Korean Physical Society.

Abstract
This study was focused on two different systems of low dielectric constant SiOC films which were deposited by CCP-CVD and ICP-CVD. The understanding of low dielectric constant is important issue in SiOC films. Reduction of dielectric constant resulted from decreasing of the thickness due to the ionic and electronic polarization. Most SiOC films decreased the dielectric constant by the ionic polarization effect. The electronic polarization effect obtained from the refractive index was the difference between samples deposited by CCP-CVD and ICP-CVD, respectively. The refractive index of SiOC film by CCP-CVD was in proportion to the trend of thickness, but the refractive index of SiOC film by the ICP-CVD was not in accord with the trend of thickness. Because the dissociation energy was different according to the systems, therefore the relative contribution of the electronic polarization was varied.


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