Magnetic and Electric Properties of Ba-doped BiFeO3 Epitaxial Thin Films Prepared by Pulsed Laser Deposition
J. Korean Phy. Soc. 2009; 55: 609~612
Published online August 14, 2009 © 2009 The Korean Physical Society.

Abstract
We report the structural, magnetic and electric properties ofepitaxial Ba-doped BiFeO$_{3}$ (BBFO), {it i.e.},Bi$_{0.75}$Ba$_{0.25}$FeO$_{3-delta}$, thin films grown onSrRuO$_{3}$/SrTiO$_{3}$ (001) substrates by pulse laser depositiontechnique. At oxygen partial pressures of 500 mTorr and a substratetemperature of 600 $^circ$C, pure and epitaxial BBFO thin film isgrown without any Fe$_{2}$O$_{3}$ and Fe$_{3}$O$_{4}$ impurities.Ba$^{2+}$ doping in BiFeO$_{3}$ seems to induce a suppression of theantiferromagnetic spiral spin structure and the change of Fe-O-Febonding angle, in addition to the creation of oxygen vacancies.Hence, the BBFO film shows weak ferromagnetism, but a leakydielectric behavior at room temperature. Thermally-activated hoppingis found to be the main conduction mechanism in BBFO with anactivation energy of 0.52 eV.
Keywords: Epitaxial Bi$_{0.75}$Ba$_{0.25}$FeO$_{3-delta}$ thin film, Weak ferromagnetism, Leaky dielectric


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