Atomic Layer Deposition of Ruthenium and Ruthenium-oxide ThinFilms by Using a Ru(EtCp)$_{2}$ Precursor and Oxygen Gas
J. Korean Phy. Soc. 2009; 55: 32~37
Published online July 15, 2009 © 2009 The Korean Physical Society.

Abstract
vspace{-0.2cm}In this study, the growth characteristics and the film properties ofRu and RuO$_{2}$ thin films were systematically investigated,focusing on the effects of the oxygen exposure and the growthtemperature. Pure Ru thin films with low resistivity were depositedfrom bis(ethylcyclopentadienyl)ruthenium [Ru(EtCp)$_{2}$] as a Ruprecursor and oxygen (O$_{2})$ as a reactant by using thermal atomiclayer deposition (ALD). Phase change from Ru to RuO$_{2}$ wasobserved by controlling the growth parameters, including the O$_{2}$flow rate and the growth temperature. In order to investigate thedependence of the phase change on the deposition parameters, weevaluated the crystalline structure and the chemical composition byusing X-ray diffraction (XRD) and X-ray photoelectron spectroscopy(XPS).
Keywords: Ru, RuO$_{2}$, Atomic layer deposition, Growth characteristics, Films properties, Effects of oxygen exposure, Effects of growth temperature, Phase control


Go to page for Current Issue
Go to page for Current Issue

  • e-Submission
  • For review & Editor

Indexed/Covered by

  • Scopus