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The Effect of Plasma Anodization on AlGaN/GaN HEMT
S. H. MOON, H. J. AHN, J. S. LEE, K. H. SHIM and J. W. YANG
J. Korean Phy. Soc. 2007; 51: 258-261  
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Nickel-Based Germanosilicide of n+-Si0.83Ge0.17 for Various Doping Concentrations and Rapid Thermal Annealing Conditions
A. R. Choi, S. S. Choi, J. H. Kim, H. D. Yang, J. W. Yang, J. Y. Kim, K. H. Shim, S. H. Kim, S. H. Lee and J. L. Lee
J. Korean Phy. Soc. 2006; 49: 800-  
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Reduction of Gate Leakage Current in AlGaN/GaN MOSHFET Using NiO
H. J. Ahn, C. S. Oh, K. J. Lee, J. W. Yang, G. M. Yang and K. Y. Lim
J. Korean Phy. Soc. 2005; 47: 581-  
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Enhancement of the Electrical Properties of AlGaN/GaN HFETs by Using Undoped Semi-Insulating GaN
Y. H. Jeong, C. S. Oh, E. H. Shin, J. Y. Kim, J. W. Yang, K. Y. Lim
J. Korean Phy. Soc. 2004; 44: 140-  
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UV-Assisted Electrochemical Oxidation of GaN
J. W. Seo, C. S. Oh, H. S. Cheong, J. W. Yang, C. J. Youn, K. Y. Lim
J. Korean Phy. Soc. 2002; 41: 1017-  
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Effect of an Al Pre-seeded AlN Buffer on GaN Films Grown on Si(111) Substrates by Using SiC Intermediate Layers
M. K. Kwon, Y. H. Jeong, E. H. Shin, J. W. Yang, K. Y. Lim, J. I. Roh, K. S. Nahm
J. Korean Phy. Soc. 2002; 41: 880-  
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Optical Degradation of InGaN/GaN Multi Quantum Well LED Structures Induced by the Mg-Doped p-GaN Activation Temperature
C. J. Youn, T. S. Jeong, M. S. Han, J. W. Yang, K. Y. Lim, H. W. Yu
J. Korean Phy. Soc. 2002; 41: 778-  
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Effect of Growth Conditions on GaN Grown by Lateral Epitaxial Overgrowth
Y. H. Song, J.-H. Kim, H. J. Jang, S. R. Joon, J. W. Yang, K. Y. Lim, G. M. Yang
J. Korean Phy. Soc. 2001; 38: 242-  
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