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Leakage Transport in the High-resistance State of a Resistive-switching NbOx Thin Film Prepared by Pulsed Laser Deposition
Kyooho Jung, Y. Kim, Hyunsik Im, Hyungsang Kim, Baeho Park
J. Korean Phy. Soc. 2011; 59: 2778-2781  
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Supercapacitive Characteristics of Electrodeposited Polyaniline Thin Films Grown on Indium-doped Tin-oxide Substrates
A. I. Inamdar, Young Sam Kim, Jae Sang Sohn, Hyunsik Im, Hyungsang Kim, Dae-Young Kim, R. S. Kalubarme, ChanJin Park
J. Korean Phy. Soc. 2011; 59: 145-149  
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Micro- and Time-resolved Photoluminescence in GaN Nanorods with Different Diameters
Hyunsik Im, YS Park, Sun-Kyun Lee, Yong-Hoon Cho, RA Taylor
J. Korean Phy. Soc. 2010; 57: 756-759  
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Dislocation Defects in GaN Epilayers Grown on Si (100) Substrates by Metal-organic Chemical-vapor Deposition
Hyunsik Im, Young S. Park, Y. H. Kwon, Woong Jung, Hyungsang Kim, Minseon Kim, W. C. Yang, Junho Lee, Hong Goo Choi, Cheong Hyun Roh, Cheol-Koo Hahn
J. Korean Phy. Soc. 2010; 56: 1172-1175  
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Tunneling Transport Simulation in Asymmetric Junction Devices with Evanescent States at a Junction Interface
Hyunsik Im
J. Korean Phy. Soc. 2009; 55: 2512-2516  
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Nonvolatile Unipolar and Bipolar Resistive SwitchingCharacteristics in Co-doped TiO$_{2}$ Thin Films with DifferentCompliance Currents
YoungHo Do, JuneSik Kwak, JinPyo Hong, Hyunsik Im, BaeHo Park
J. Korean Phy. Soc. 2009; 55: 1009-1012  
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Velocity Saturation Effects in a Short Channel Si-MOSFET and itsSmall Signal Characteristics
Sanghoon Hwang, Hyunsik Im, Minkyu Song, Koichi Ishida, Toshiro Hiramoto, Takayasu Sakurai
J. Korean Phy. Soc. 2009; 55: 581-584  
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Spatially-Resolved Cathodoluminescence in GaN Nanorods and in AlGaN/GaN Multiquantum Discs Having Different Quantum Confinement States
Young S. Park and Hyunsik Im
J. Korean Phy. Soc. 2009; 54: 1730-1733  
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Resistive Switching Properties of a Polycrystalline TiO2 Memory Cell with a WN Buffer Layer Inserted
JuneSik Kwak, YoungHo Do, JongHyun Lee, JinPyo Hong, BaeHo Park, HyunSik Im, SeokJong Woo
J. Korean Phy. Soc. 2008; 53: 3685-3689  
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Spin-Resolved Resonant Tunneling in a III-V Semiconductor Double-Barrier Structure
Yongmin Kim, Kyooho Jung and Hyunsik Im
J. Korean Phy. Soc. 2008; 53: 3488-3492  
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